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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT General Purpose NPN Transistor VOLTAGE 50 Volts APPLICATION * Small Power Amplifier . 2SC4617PT CURRENT 0.15 Ampere FEATURE * Surface mount package. (SC-75/SOT-416) * Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 150mW (Collector power dissipation). (3) SC-75/SOT-416 0.1 0.20.05 0.5 1.60.2 0.5 (2) CONSTRUCTION * NPN Silicon Transistor * Epitaxial planner type 1.00.1 0.1 0.30.05 0.1 0.20.05 0.80.1 (1) MARKING * hFE(Q): UX * hFE(R): UY * hFE(S): UZ 0.150.05 0.1Min. 0.6~0.9 0~0.1 1.60.2 CIRCUIT (1) B C (3) E (2) Dimensions in millimeters SC-75/SOT-416 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Collector Power Dissipation Storage Temperature Junction Temperature TA 25OC CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC PTOT TSTG TJ MIN. -55 MAX. 60 50 7 150 150 +150 +150 UNITS Volts Volts Volts mAmps mW o C C o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-12 RATING CHARACTERISTICS ( 2SC4617PT ) ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=60V IC=0; VEB=7V VCE=6V; Note 1 IC=1mA; Note 2 SYMBOL ICBO IEBO MIN. TYPE MAX. 0.1 0.1 UNITS uA uA DC Current Gain hFE 120 - 560 Collector-Emitter Saturation Voltage Collector-Emitter Breakdown Voltage Output Collector Capacitance Transition Frequency IC=50mA; IB=5mA IC=1mA IE=ie=0; VCB=12V; f=1MHz IE=-2mA; VCE=12V; f=100MHz VCEsat VCEO Cob fT 50 - 2.0 180 0.4 Volts Volts pF MHz 3.5 - Note : 1. Pulse test: tp 300uSec; 0.02. 2. hFE: Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560 RATING CHARACTERISTIC CURVES ( 2SC4617PT ) Fig.1 50 COLLECTOR CURRENT : IC(mA) Grounded emitter propagation characteristics VCE=6V Ta=100OC COLLECTOR CURRENT : IC(mA) Fig.2 100 Grounded emitter output characteristics (1) 0.50mA COLLECTOR CURRENT : IC(mA) Fig.3 10 Ta=25C Grounded emitter output characteristics (2) 30A 27A Ta=25C 20 10 5 80 mA 0.45 A 0.40m 0.35mA 8 24A 21A 0.30mA 25C -55C 60 0.25mA 0.20mA 6 18A 15A 2 1 40 0.15mA 0.10mA 4 12A 9A 0.5 25OC 55OC 20 0.05mA IB=0A 2 6A 3A 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE(V) 0 0.4 0.8 1.2 1.6 2.0 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE(V) COLLECTOR TO EMITTER VOLTAGE : VCE(V) RATING CHARACTERISTIC CURVES ( 2SC4617PT ) Fig.4 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Fig.5 DC current gain vs. collector current 0.5 IC/IB=50 TRANSITION FREQUENCY : fT(MHz) Fig. 6 Gain bandwidth product vs. emitter current 500 0.5 IC/IB=10 Ta=25C VCE=6V DC CURRENT GAIN : hFE 0.2 Ta=100C 25C -55C 0.2 0.1 Ta=100C 25C -55C 0.1 0.05 200 0.05 0.02 100 0.02 0.01 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 50 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) EMITTER CURRENT : IE(mA) |
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